发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes.
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申请公布号 |
US8581305(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201113046894 |
申请日期 |
2011.03.14 |
申请人 |
FUKUZUMI YOSHIAKI;AOCHI HIDEAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI;AOCHI HIDEAKI |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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