发明名称 |
Self-aligned Semiconductor Ridges in Metallic Slits as a Platform for Planar Tunable Nanoscale Resonant Photodetectors |
摘要 |
A photodetector having a ridge-in-slit geometry is provided, where a semiconductor ridge is laterally sandwiched in a metallic slit. This assembly is disposed on a layer of semiconducting material, which in turn is disposed on an insulating substrate. These structures can provide efficient resonant detectors having the wavelength of peak response set by the ridge width. Thus a lateral feature defines the wavelength of peak responsivity, as opposed to a vertical feature. |
申请公布号 |
US2013292788(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313886998 |
申请日期 |
2013.05.03 |
申请人 |
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
COIMBATORE BALRAM KRISHNA;MILLER DAVID A.B. |
分类号 |
H01L31/0352;H01L27/14 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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