| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film. |
| 申请公布号 |
US2013292700(A1) |
申请公布日期 |
2013.11.07 |
| 申请号 |
US201213981048 |
申请日期 |
2012.01.23 |
| 申请人 |
TERAMOTO AKINOBU;KAMBAYASHI HIROSHI;UEDA HIROKAZU;MOROZUMI YUICHIRO;HARADA KATSUSHIGE;HASEBE KAZUHIDE;OHMI TADAHIRO;TOHOKU UNIVERSITY;TOKYO ELECTRON LIMTED;ADVANCED POWER DEVICE RESEARCH ASSOCIATION |
发明人 |
TERAMOTO AKINOBU;KAMBAYASHI HIROSHI;UEDA HIROKAZU;MOROZUMI YUICHIRO;HARADA KATSUSHIGE;HASEBE KAZUHIDE;OHMI TADAHIRO |
| 分类号 |
H01L29/20;H01L21/02 |
主分类号 |
H01L29/20 |
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