发明名称 MAGNETIC MEMORY AND METHOD OF FABRICATION
摘要 A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.
申请公布号 US2013288394(A1) 申请公布日期 2013.10.31
申请号 US201313872888 申请日期 2013.04.29
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 KONTOS ALEXANDER C.;SHERMAN STEVEN;HAUTALA JOHN J.;RUFFELL SIMON
分类号 H01L43/12 主分类号 H01L43/12
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