METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

[Problem] To efficiently minimize contamination of a film formation surface immediately prior to film formation, without the use of a specialized cleaning device during the formation preprocess. [Solution] The method has: an ion plasma cleaning step for ion plasma cleaning through ion plasma irradiation of the back surface of an insulating substrate (2); and a DBR deposition film formation step for forming a DBR deposition film (7) on the back surface (irradiated surface) of the insulating substrate (2) having undergone ion plasma irradiation. In so doing, the DBR deposition film (7) is formed on the back surface of the insulating substrate (2) after organic matter, moisture, and other contaminant substances have been eliminated from the back surface of the insulating substrate (2) by ion plasma cleaning.