Display device, array substrate, thin film transistor and method for manufacturing the same

摘要

Embodiments of the present invention relate to a display device, an array substrate, a thin film transistor and a method for manufacturing the same. The thin film transistor comprises a gate, an active layer and a gate insulating layer disposed between the gate and the active layer, the active layer is an oxide semiconductor, and the gate insulating layer comprises at least one layer of inorganic insulating thin film. With the gate insulating layer of the thin film transistor, it is possible that an adverse effect on the oxide semiconductor given by hydrogen-containing groups is effectively avoided, stability of the whole TFT device is enhanced to the most extent, and yield of final products is increased.