| 摘要 |
According to one embodiment, a semiconductor device that has a rectification element includes a semiconductor substrate, a first well region of a first conductivity type formed on the semiconductor substrate, a second well region of a second conductivity type formed on the semiconductor substrate, and a plurality of fins arranged over the first well region and the second well region at a first pitch in the same direction. In the semiconductor device, the rectification element includes a cathode region, an anode region, a well contact region, and a trigger region that are configured using fins. These regions are connected to each wiring portion to form a PNP-type bipolar transistor and an NPN-type bipolar transistor.
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