发明名称 |
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY |
摘要 |
A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.
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申请公布号 |
US2013270709(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213443963 |
申请日期 |
2012.04.11 |
申请人 |
TSENG CHIAHSUN;LIU JIN;ZHUANG LEI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSENG CHIAHSUN;LIU JIN;ZHUANG LEI |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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