| 摘要 |
A method for forming a thin-film transistor gate insulating layer (100; 302) over a substrate (102) disposed in a processing chamber (104) is provided. The method includes: introducing a processing gas (116) for producing a plasma in the processing chamber (104); heating the substrate (102) to a substrate processing temperature of between 50 and 350° C; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate (102) by sputtering a target assembly (108) at a medium frequency. |
