发明名称 SPUTTERING TARGET FOR FORMING TRANSPARENT OXIDE FILM, AND METHOD FOR PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for forming a zinc oxide-based transparent oxide film, by which the transparent oxide film having low refractive index and favorable gas-barrier property can be formed by direct-current sputtering, and target crack or abnormal discharge does not occur.SOLUTION: A sputtering target is composed of the oxide of a composition comprising, with respect to the whole metal component amount, 0.6-8.0 at% of one or both of Al and Ga, 24-33 at% of Si, and the balance Zn with inevitable impurities. The Si exists in the oxide as a Zn-Si composite oxide, or as the Zn-Si composite oxide in a part and amorphous oxide in the balance.
申请公布号 JP2013213268(A) 申请公布日期 2013.10.17
申请号 JP20120085156 申请日期 2012.04.04
申请人 MITSUBISHI MATERIALS CORP 发明人 SAITO ATSUSHI;YAMAGUCHI TAKESHI;CHO SHUHIN
分类号 C23C14/34;C04B35/453 主分类号 C23C14/34
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