发明名称 |
GROUP III-N HFET WITH A GRADED BARRIER LAYER |
摘要 |
A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer.
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申请公布号 |
US2013270572(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201213448348 |
申请日期 |
2012.04.16 |
申请人 |
BROWN DAVID F.;MICOVIC MIROSLAV;HRL LABORATORIES, LLC |
发明人 |
BROWN DAVID F.;MICOVIC MIROSLAV |
分类号 |
H01L29/205;H01L21/20;H01L21/22 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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