发明名称 |
Semiconductor device and method of manufacturing the semiconductor device |
摘要 |
A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
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申请公布号 |
US8558334(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201213399475 |
申请日期 |
2012.02.17 |
申请人 |
UEKI MAKOTO;INOUE NAOYA;HAYASHI YOSHIHIRO;RENESAS ELECTRONICS CORPORATION |
发明人 |
UEKI MAKOTO;INOUE NAOYA;HAYASHI YOSHIHIRO |
分类号 |
H01L29/82;H01L21/00;H01L23/552;H01L27/08 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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