发明名称 |
Integrated decoupling capacitor employing conductive through-substrate vias |
摘要 |
A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV's can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.
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申请公布号 |
US8558345(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20090614883 |
申请日期 |
2009.11.09 |
申请人 |
KIM TAE HONG;SPROGIS EDMUND J.;MCALLISTER MICHAEL F.;SHAPIRO MICHAEL J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM TAE HONG;SPROGIS EDMUND J.;MCALLISTER MICHAEL F.;SHAPIRO MICHAEL J. |
分类号 |
H01L27/108;H01L21/02;H01L23/04;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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地址 |
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