METAL NITRIDE FILM FOR THERMISTOR, PROCESS FOR PRODUCING SAME, AND THERMISTOR SENSOR OF FILM TYPE

摘要

Provided are a metal nitride film for thermistors which is capable of being directly formed on a film or the like without through burning and which has excellent flexing resistance, a process for producing the metal nitride film, and a thermistor sensor of a film type. The metal nitride film is for use as a thermistor and comprises a metal nitride represented by the general formula TixAlyNz (0.70<=y/(x+y)<=0.95, 0.4<=z<=0.5, and x+y+z=1). The metal nitride has a crystal structure constituted of a hexagonal wurtzite structure as the only phase. In X-ray analysis, the peak ratio of the intensity of the diffraction peak assigned to a-axis orientation (100) to the intensity of the diffraction peak assigned to c-axis orientation (002) [(diffraction peak intensity for a-axis orientation (100))/(diffraction peak intensity for c-axis orientation (002))] is 0.1 or less.