SEMICONDUCTOR NONVOLATILE STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem occurring in a MIS memory transistor which includes resistance means electrically connected with a source region for improving injection efficiency of electric charge that writing reliability is improved but reading margin in an initial state is reduced.SOLUTION: In a MIS memory transistor including resistance means electrically connected with a source region, the resistance means includes variable means for making a value of resistance in data writing be lower than that in data reading.