CONTACT OR VIA CRITICAL DIMENSION CONTROL WITH NOVEL CLOSED LOOP CONTROL SYSTEM IN CHEMICAL MECHANICAL PLANARIZATION PROCESS

摘要

Closed loop control may be used to improve uniformity of contact or via critical dimension using chemical mechanical planarization. For example, real-time closed loop control may be used to adjust oxide buffing or over-polishing time in a chemical mechanical planarization process to more uniformly and consistently achieve a target critical dimension of a semiconductor wafer.