| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of checking insulation properties of an insulating film in a trench in the early stage of a manufacturing step.SOLUTION: There is provided a method for manufacturing a semiconductor device in which an insulating film and a first electrode are formed in a trench of a semiconductor substrate, a second electrode separated from the first electrode is formed on the semiconductor substrate, a p-type semiconductor region in contact with the insulating film and an n-type semiconductor region exposed on an upper surface of the semiconductor substrate between the p-type semiconductor region and the second electrode are formed in the semiconductor substrate, and a third electrode in contact with the p-type semiconductor region is formed on the semiconductor substrate. This method comprises the steps of: forming a trench; forming an insulating film; forming a first electrode in the trench after forming the insulating film; forming a second electrode; detecting the current flowing between the first electrode and the second electrode by applying voltage between the first electrode and the second electrode; and forming a third electrode after the current detection step. |
