NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which can realize fast operating speed in all of a cell array region and a peripheral circuit region.SOLUTION: A nonvolatile memory device includes: a substrate 1; a memory gate pattern MG1 and a non-memory gate pattern NG1 which are disposed on the substrate 1 and separated from each other, where the non-memory gate pattern NG1 includes an ohmic layer, and the memory gate pattern MG1 does not include an ohmic layer 8. In this device, the memory gate pattern MG1 does not include an ohmic layer, but the non-memory gate pattern NG1 includes an ohmic layer 8.