| 摘要 |
PROBLEM TO BE SOLVED: To reduce operation resistance after a breakdown while stabilizing a breakdown voltage.SOLUTION: A semiconductor device includes a p-type semiconductor layer PSL 1 provided in an n-type semiconductor layer NSL1, a p-type semiconductor layer PSL2 provided in the p-type semiconductor layer PSL1 and has a higher impurity density than the p-type semiconductor layer PSL1, and an n-type semiconductor layer NSL2 provided on the p-type semiconductor layer PSL2 to include the p-type semiconductor layer PSL2 inside in plan view, and having a lower surface in contact with the p-type semiconductor layer PSL1 and the p-type semiconductor layer PSL2. Further, the p-type semiconductor layer PSL1 includes a depletion region positioned in a depletion layer generated by a pn junction PNJ1 formed with the n-type semiconductor layer NSL2, and a high-density impurity region positioned below the depletion layer and having a higher impurity density than the depletion region. |
