| 摘要 |
A gallium nitride based compound semiconductor light-emitting element according to an embodiment of the present disclosure includes: an n-type gallium nitride based compound semiconductor layer; a p-type gallium nitride based compound semiconductor layer; and an active layer which is arranged between the n- and p-type gallium nitride based compound semiconductor layers. The active layer and the p-type gallium nitride based compound semiconductor layer are m-plane semiconductor layers. The p-type gallium nitride based compound semiconductor layer includes magnesium at a concentration of 2.0×1018 cm-3 to 2.5×1019 cm-3 and oxygen, of which the concentration is 5% to 15% of the concentration of the magnesium.
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