| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by which a normally-off operation can be attained.SOLUTION: A semiconductor device includes: a first semiconductor layer which includes AlGaN(0≤X<1) of undope; a second semiconductor layer which is provided on the first semiconductor layer, includes AlGaN(0<Y≤1, X<Y) of undope or n type, and the band gap of which is larger than that of the first semiconductor layer; and an electrode provided on the second semiconductor layer. Halogen group atoms are added at least to the second semiconductor layer immediately under the electrode, concentration distribution of the halogen group atoms has a peak on the electrode side. |
