PHOTOVOLTAIC ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

The principal purpose of the present invention is to provide a photovoltaic element employing a semiconductor that has a localized level or intermediate band in the forbidden band, making possible higher capability than in the past. The present invention is a photovoltaic element provided with first layers formed of a first semiconductor material, and second layers formed of a second semiconductor material different from the first semiconductor material. The second semiconductor material has a localized level or intermediate band in the forbidden band thereof. The first layers and the second layers are stacked in repeating fashion, with at least two or more second layers disposed between a pair of first layers. The thickness of the second layers is less than the thickness of four molecular layers of the first semiconductor material.