发明名称 |
METHOD FOR PRODUCING GEMSTONES FROM SILICON CARBIDE |
摘要 |
The invention relates to growing and processing monocrystals. Silicon carbide produced by the method of the present invention can be used not only for the electronic industry and jewelry-making but also as glass for watches or watchcase. The method comprises simultaneously growing a plurality of moissanite crystal blanks in a honeycomb mold of molding graphite, separating the blanks into individual crystals, faceting, grinding and polishing the crystals. Prior to faceting, the blanks are glued onto a mandrel with their one side and then-with the reverse side thereof. Polishing is carried out on a ceramic wheel rotating at a rate of 200 to 300 rpm using diamond powder spray with a grain size of 0.125-0.45 µm to ensure that the depth of scratch marks be less than the length of a light wave in the visible part of the spectrum, and the cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the stage of growing.
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申请公布号 |
EP2634295(A1) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20110836702 |
申请日期 |
2011.08.18 |
申请人 |
OBSHESTVO S OGRANICHENNOJ OTVETSTVENNOSTJU "GRANNIK" |
发明人 |
KLISHIN, ALEKSANDR VALEREVICH;PETROV, JURIJ IVANOVICH;TUZLUKOV, VIKTOR ANATOL'EVICH |
分类号 |
C30B33/00;A44C17/00;C01B31/36;C30B29/36 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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