发明名称 |
ATOMIC LAYER DEPOSITION LITHOGRAPHY |
摘要 |
<p>Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.</p> |
申请公布号 |
WO2013126175(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
WO2013US22988 |
申请日期 |
2013.01.24 |
申请人 |
APPLIED MATERIALS, INC.;WU, BANQIU;KUMAR, AJAY;NALAMASU, OMKARAM |
发明人 |
WU, BANQIU;KUMAR, AJAY;NALAMASU, OMKARAM |
分类号 |
H01L21/027;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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