发明名称 |
SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT |
摘要 |
Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. Method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.
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申请公布号 |
US2013221446(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201313850840 |
申请日期 |
2013.03.26 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
KIRBY KYLE K.;PAREKH KUNAL R. |
分类号 |
H01L23/498;H01L29/78 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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