| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device which is highly integrated and capable of high-speed operation.SOLUTION: A storage device comprises: a drive circuit; and a plurality of memory cells provided on the drive circuit in a stacked manner, each of which is electrically connected by one electrode. High-speed operation is required for the drive circuit and small off-state current is required for transistors of the memory cell. In particular, it is preferable that a transistor of the drive circuit is made of a single crystal semiconductor (e.g., single crystal silicon), and the transistors of the plurality of memory cells are made of oxide semiconductors. |
