| 摘要 |
An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. The adapting or matching layer differs from the intermediate insulator and the substrate oxide in its chemical composition and/or structure. The adapting or matching layer and the ion sensitive, sensor layer each have an electrical conductivity greater than that of the intermediate insulator. There is an electrically conductive connection between the adapting or matching layer and the ion sensitive, sensor layer.
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