SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A first first-conductivity-type impurity region (4) is provided at an upper part of a semiconductor layer (102) positioned at the periphery of a trench (12). A gate electrode (8) is provided, with a gate insulating film (11) therebetween, on the side wall surfaces of the trench (12) and on the semiconductor layer (102) positioned at the periphery of the trench (12). Between the gate electrode (8) positioned at the periphery of the trench (12), and the first first-conductivity-type impurity region (4), a second-conductivity-type impurity region (50) and a second first-conductivity-type impurity region (51) are sequentially provided from the side of the first first-conductivity-type impurity region (4).