SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a conductive film with less impurity without thermally damaging the semiconductor device, and which can avoid increase in the number of manufacturing processes.SOLUTION: A semiconductor device manufacturing method according to an embodiment comprises the steps of: selectively depositing a second conductive film on a first conductive film by using a CVD method while irradiating micro wave to a semiconductor substrate having the first conductive film and a first insulation film on a surface to maintain a state where a temperature of a surface of the first conductive film is 50°C or more higher in comparison with a surface of the first insulation film; and forming a third conductive film by performing heat treatment on the second conductive film to react the first conductive film with the second conductive film.