发明名称 FILM FORMATION APPARATUS AND FILM FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film formation apparatus capable of forming a vapor-deposited film to cover a deposition target object having a three-dimensional curved surface, and to provide a film formation method of a vapor-deposited film to cover a three-dimensional curved surface.SOLUTION: A film formation apparatus is equipped with: a vapor deposition source having a directivity in deposition direction; a vapor deposition source moving mechanism which moves the vapor deposition source; a deposition target object holding mechanism which holds a deposition target object having a three-dimensional curved surface; a deposition direction changing mechanism which changes the deposition direction; and a control part which controls the vapor deposition source moving mechanism and the deposition direction changing mechanism.
申请公布号 JP2013147743(A) 申请公布日期 2013.08.01
申请号 JP20120278030 申请日期 2012.12.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;EGUCHI SHINGO
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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