发明名称 |
FILM FORMATION APPARATUS AND FILM FORMATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a film formation apparatus capable of forming a vapor-deposited film to cover a deposition target object having a three-dimensional curved surface, and to provide a film formation method of a vapor-deposited film to cover a three-dimensional curved surface.SOLUTION: A film formation apparatus is equipped with: a vapor deposition source having a directivity in deposition direction; a vapor deposition source moving mechanism which moves the vapor deposition source; a deposition target object holding mechanism which holds a deposition target object having a three-dimensional curved surface; a deposition direction changing mechanism which changes the deposition direction; and a control part which controls the vapor deposition source moving mechanism and the deposition direction changing mechanism. |
申请公布号 |
JP2013147743(A) |
申请公布日期 |
2013.08.01 |
申请号 |
JP20120278030 |
申请日期 |
2012.12.20 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;EGUCHI SHINGO |
分类号 |
C23C14/24;H01L51/50;H05B33/10 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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