| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device that can improve channel mobility by suppressing a decrease in threshold voltage.SOLUTION: A silicon dioxide film is formed as a gate oxide film 15 on a silicon carbide base 10, and the silicon carbide base 10 having the silicon dioxide film formed is thermally treated in an atmosphere including nitrogen oxide gas to be nitrided in a reactor. Consequently, a silicon carbide semiconductor device 1 can be improved in channel mobility. After the nitriding, the temperature in the reactor is lowered in the atmosphere including the nitrogen oxide gas. Consequently, formation of an oxygen vacancy after the nitriding can be suppressed, so that the silicon carbide semiconductor device 1 can be suppressed from decreasing in threshold voltage to have higher channel mobility. |
