| 摘要 |
PROBLEM TO BE SOLVED: To provide a peeling method in which only a few defects occur on a semiconductor thin film in manufacture of a substrate with a thin film, for example, an SOI substrate.SOLUTION: A method for manufacturing a substrate with a thin film comprises at least the steps of: preparing a semiconductor substrate and an insulating substrate; forming an ion implantation layer in the semiconductor substrate by implanting a hydrogen ion or a rare gas ion or both ions from a surface of the semiconductor substrate; applying surface activation processing to at least one of the surface from which the ion of the semiconductor substrate was implanted and a surface of the insulating substrate before sticking both the surfaces; sticking the surface from which the ion of the semiconductor substrate was implanted and the surface of the insulating substrate; applying heat treatment to the stuck surfaces of the semiconductor substrate and the insulating substrate; and transferring the semiconductor thin film to the insulating substrate by mechanically peeling the ion implantation layer by making a mechanical impact on the ion implantation layer while vibrating the ion implantation layer after the heat treatment step. |
