| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflection type mask for EUV exposure that reduces an influence of a phase defect by precisely grasping a position of the phase defect, which grows obliquely, and arranging an absorber pattern so that the absorber pattern covers a position at which an actual phase defect occurs.SOLUTION: A method of manufacturing a reflection type mask, which reduces an influence of a phase defect, includes the steps of: grasping an amount of positional displacement between a surface defect position, which is detected through far ultraviolet light inspection of a reflection type mask blank, and an actual phase defect position in advance; detecting a surface defect and obtaining positional information by performing surface defect inspection on the reflection type mask blank using far ultraviolet light; calculating an actual phase defect position and range from the amount of positional displacement and the positional information of the surface defect; and arranging a pattern of an absorber layer on the basis of the calculated actual phase defect position and range. |
