发明名称 |
Methods of forming doped regions in semiconductor substrates |
摘要 |
Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
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申请公布号 |
US8497194(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201213674674 |
申请日期 |
2012.11.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU LEQUN JENNIFER;QIN SHU;MCTEER ALLEN;HU YONGJUN JEFF |
分类号 |
H01L21/26;H01L21/42 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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