DEPOSITION METHOD OF TiSiN FILM AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To deposit a TiSiN film which has good controllability in an Si concentration and high stability.SOLUTION: A deposition method of a TiSiN film comprises: carrying a processed substrate in a processing container; maintaining the inside of the processing container in a reduced pressure; and repeating the following steps (1)-(3) of forming a TiSiN unit film on the processed substrate a plurality of times while heating the processed substrate: (1) a step of supplying a Ti-containing gas or a step of supplying a Ti-containing gas and a nitride gas; (2) a step of supplying a nitride gas; and (3) a step of supplying an Si-containing gas containing Cl. When the TiSiN film of a predetermined film thickness is deposited, a temperature during the deposition is set at a temperature at which Cl does not desorb from the Si-containing gas containing Cl.