HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A transistor with high electron mobility and a manufacturing method thereof are provided to easily control the size, position, and depth of a high resistive area by forming the high resistive area through the injection of an impurity. CONSTITUTION: An insulation layer (IL1) is formed on a substrate (SUB1). A gate electrode (G1), a source electrode (S1) and a drain electrode (D1) are formed on the insulation layer. A channel supply layer (CS1) is formed on the insulation layer to contact the gate electrode, the source electrode, and the drain electrode. A channel layer including a two-dimensional electron gas is formed on the channel supply layer. The channel layer includes an effective channel area in contact with the channel supply layer and a high resistive area formed on the effective channel area.