| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-luminance semiconductor light-emitting element.SOLUTION: A method of manufacturing a semiconductor light-emitting element includes the steps of: forming an n-side barrier layer on a semiconductor layer containing an n-type impurity including a nitride semiconductor; forming a first well layer on the n-side barrier layer; forming a first AlGaN layer on the first well layer; forming a first cap layer including the nitride semiconductor on the first AlGaN layer; forming a first barrier layer on the first cap layer at a temperature higher than that at the time of forming the first cap layer; and forming a semiconductor layer containing a p-type impurity including the nitride semiconductor on the first barrier layer. The peak wavelength λp of light emitted from a light-emitting part including the first well layer, the first AlGaN layer, the first cap layer, and the first barrier layer is longer than 515 nm. |
