RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A variable resistance memory device and a manufacturing method thereof are provided to improve a switching characteristic by controlling current paths in a variable resistance layer. CONSTITUTION: A variable resistance layer is formed between a first electrode (110) and a second electrode (150). A variable resistance layer consists of a first variable resistance layer (120) and a second variable resistance layer (140). Nanoparticles (130) are formed in the variable resistance layer. The dielectric constant of the nanoparticles is lower than that of the variable resistance layer. The nanoparticles are uniformly distributed in the variable resistance layer.