| 摘要 |
A junction structure is provided with: an electrode of a substrate; an electrode of a semiconductor element; and a junction section that joins the electrode of the substrate, and the electrode of the semiconductor element. Starting from the electrode of the substrate and progressing toward the electrode of the semiconductor element, the following layers are placed in the following sequence in the junction section: a first intermetallic compound layer that contains a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer that contains a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer that contains a CuSn-based intermetallic compound. |
