发明名称 PHOTODIODE ARRAY AND METHODS OF FABRICATION
摘要 Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.
申请公布号 US2013168750(A1) 申请公布日期 2013.07.04
申请号 US201213343165 申请日期 2012.01.04
申请人 IKHLEF ABDELAZIZ;LI WEN;GENERAL ELECTRIC COMPANY 发明人 IKHLEF ABDELAZIZ;LI WEN
分类号 H01L27/146;H01L31/18 主分类号 H01L27/146
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