| 摘要 |
With the formation of a SixC1-xN functional layer on a barrier layer, a nitride based semiconductor device may improve a surface roughness of the barrier layer, and may reduce a surface leakage current by, for example, inhibiting aluminum (Al) and oxygen (O) from combining with each other on the barrier layer. In addition, when compared to a structure in which a barrier layer and an electrode directly contact each other, a barrier may be relatively low in a structure in which the SixC1-xN functional layer is formed between the barrier layer and the electrode. Accordingly, an operating voltage may be lowered to increase a current density.
|
