| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antenna, alternate current circuit, and plasma processing apparatus capable of generating plasma with a desired plasma density at a desired position in a chamber. <P>SOLUTION: An antenna 1 is formed by a first path 1a passing the center of the antenna 1, a second path 1b passing an upper part of the first path, and a third path 1c passing a lower part of the first path. A first width w<SB>1</SB>is formed to be smaller than a second width w<SB>2</SB>. A first gap shape 2a is formed to be different from a second gap shape 2b. Thereby, the plasma with a desired plasma density can be generated at a desired position in a chamber, so that plasma damage to a processed substrate can be reduced, for example. Further, the antenna 1 is a parallel trifilar-wound antenna, thereby impedance is reduced compared with a parallel bifilar-wound antenna, and an alternate current voltage which has a higher frequency than the parallel bifilar-wound antenna can be applied. <P>COPYRIGHT: (C)2010,JPO&INPIT |
