| 摘要 |
#CMT# #/CMT# The module (1) has a first strip conductor (HV-M) arranged on a side of an insulation layer opposite to an electrically insulating support substrate (10). A terminal of a power semiconductor component (30) is electrically connected to the strip conductor. The insulation layer is formed and arranged such that the strip conductor is electrically insulated from a second strip conductor (HV-P) and a third strip conductor (PHASE). The second and first strip conductors are partially overlapped along direction of a vertical axis. The insulation layer is made of ceramic and formed as a film. #CMT# : #/CMT# The power semiconductor component is designed as a bipolar transistor. #CMT#USE : #/CMT# Power module for use in an inverter for converting direct current (DC) voltage from a voltage intermediate circuit into alternating current (AC) voltage for controlling rotation direction and/or rotation speed of an electric motor i.e. three-phase AC motor, utilized as a drive motor in a vehicle e.g. electric car and hybrid car. #CMT#ADVANTAGE : #/CMT# The strip conductors are partially overlapped along the direction of the vertical axis, so that parasitic structure inductances of the module can be reduced, thus reducing over voltages at the power semiconductor components, and increasing switching rate of the power semiconductor components, and hence increasing the performance, the efficiency and/or the reliability of the module. The design of the module enables reducing over voltage requirements of the power semiconductor components, thus manufacturing the module in an inexpensive manner. The insulation layer is made of ceramic material, thus enhancing heat dissipation effect of the module and/or ensuring sufficient heat dissipation of the module. The insulation layer is formed as the film, thus manufacturing the module in a simple and inexpensive manner. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a plan view of a power module. HV-M, HV-P, PHASE : Strip conductors 1 : Power module 10 : Electrically insulating support substrate 30 : Power semiconductor component 40 : Planar connector. |
