| 摘要 |
<p>The present invention provides a method for producing an SrRuO3 film, which is capable of forming a high-quality SrRuO3 film at a high film formation rate, while suppressing occurrence of an abnormal discharge during the formation of the SrRuO3 film by a DC magnetron sputtering method. One embodiment of the present invention is a method for forming an SrRuO3 film by an offset rotation type DC magnetron sputtering method, wherein an SrRuO3 film is formed on a substrate at a film formation pressure of 1.0 Pa or more but less than 8.0 Pa in an oxygen-containing atmosphere.</p> |
