| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which can improve insulation properties. <P>SOLUTION: A photoelectric conversion element 100 comprises: an n-type single crystal silicon substrate 1; a passivation film 2; p-type amorphous films 11-1m; n-type amorphous films 21-2m-1; semiconductor thin films 31-3n; and electrodes 41-4m, 51-5m. The p-type amorphous films 11-1m and the n-type amorphous films 21-2m-1 are alternately arranged in an in-plane direction with contacting a rear face of the n-type single crystal silicon substrate 1. The semiconductor thin films 31-3n contact the p-type amorphous films 11-1m and the n-type amorphous films 21-2m-1 and arranged between the p-type amorphous films 11-1m and the n-type amorphous films 21-2m-1. The electrodes 41-4m are arranged to contact the p-type amorphous films 11-1m, respectively, and the electrodes 51-5m -1 are arranged to contact the n-type amorphous films 21-2m-1, respectively. <P>COPYRIGHT: (C)2013,JPO&INPIT |
