| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of high-speed data transfer. <P>SOLUTION: A semiconductor storage device includes; a memory cell array 10; a first address or second address; and a data latch group (BANK). The data latch group includes data latch units. A first data latch unit holds either a first write address or a first read address, while a second data latch unit holds one of a second write address, second read data and second read address. <P>COPYRIGHT: (C)2013,JPO&INPIT |
