SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL

摘要

PURPOSE: A semiconductor device and a semiconductor crystal growth method are provided to improve a crystallization of a semiconductor layer by reducing damage which is given to a substrate surface. CONSTITUTION: A first epi layer(20) is formed on a base substrate. A pattern groove(30) is formed on the first epi layer. A second epi layer(40) is formed on the first epi layer. The first epi layer has a thickness of 10μm to 100μm. The base substrate and the epi layer include silicon carbide.