| 摘要 |
PURPOSE: A compound semiconductor device and a method for manufacturing the same are provided to restrain current collapse and to obtain high gain by forming a recess on the surface of a compound semiconductor stack structure. CONSTITUTION: A compound semiconductor stack structure(12) is formed in the upper part of a substrate(11). The compound semiconductor stack structure includes an electron transport layer(12b), an electron supply layer(12c), and a surface layer(12d). A gate electrode(13), a source electrode(14s), and a drain electrode(14d) are formed in the upper part of the compound semiconductor stack structure. A recess(31s) is formed on the surface of the compound semiconductor stack structure. An insulating layer(19) covers the surface layer, the source electrode and the drain electrode. [Reference numerals] (11) Substrate; (12) Compound semiconductor stack structure; (12a) Buffer layer; (12b) Electron transport layer; (12c) Electron supply layer; (12d) Surface layer; (13) Gate electrode; (14d) Drain electrode; (14s) Source electrode; (15,19) Insulating layer; (18) Element isolation region; (31d,31s,32) Recess; (33) Opening; (41,42) Depletion layer |
