SINGLE CRYSTAL GROWTH APPARATUS AND METHOD

摘要

PURPOSE: An apparatus and a method for growing a single crystal are provided to prevent the generation of crystal defects due to oversupply of carbon, by controlling the amount of the carbon supplied to a crucible in a heating process for single crystal growth temperature. CONSTITUTION: A crucible(110) accommodates a raw material. A guide ring(120) is inserted into the upper part of the crucible. A crucible cover(130) opens and closes the opened upper of the crucible. An insulating material(140) and a quartz tube(150) surround the outer surface of the crucible. A heating unit(160) is formed outside the quartz tube and heats the crucible. A coating layer(170) is formed in the inner surface of the crucible.