FORMING THICK METAL LAYERS ON A SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method according to embodiments of the invention includes providing a wafer of semiconductor devices. The wafer includes a growth substrate (40 ), a semiconductor structure including a light emitting layer (47) sandwiched between an n-type region (46) and a p-type region (48), and first and second metal contacts (80,82) for each semiconductor device, wherein each first metal contact (82) is in direct contact with the n-type region and each second metal contact (80) is in direct contact with the p-type region. First and second metal layers (28, 30) are formed on the first and second metal contacts of each semiconductor device, respectively. The first and second metal layers are sufficiently thick to support the semiconductor structure during later processing.